BDX67(2012) 데이터 시트보기 (PDF) - Comset Semiconductors

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BDX67
(Rev.:2012)

NPN SILICON DARLINGTON POWER TRANSISTOR

Comset Semiconductors 

BDX67 – A – B – C

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Max Unit

TCASE=25°C

VCB=100 V

-

-

1

BDX67B

ICBO

Collector-Base Cutoff

Current

TCASE=200°C

VCB=60 V

-

-

5

mA

TCASE=25°C

VCB=120 V

-

-

1

BDX67C

TCASE=200°C

VCB=70 V

-

-

5

hFE

Dc Current Gain

VCE=3 V, IC=1 A

- 5200 -

VCE=3 V, IC=10 A

1000 -

-

-

VCE=3 V, IC=16 A

- 4000 -

BDX67

VCE(SAT)

Collector-Emitter

Saturation Voltage (*)

IC=10 A

IB=40 mA

BDX67A

BDX67B

-

-

2

V

BDX67C

BDX67

VBE

Base-Emitter Voltage(1&2)

VCE=3 V

IC=10 A

BDX67A

BDX67B

-

- 2,5 V

BDX67C

BDX67

VF

Diode Forward Voltage

IF=10 A

BDX67A

BDX67B

-

2,5

-

V

BDX67C

BDX67

Cc

Collector Capacitance

IE=0 A

VCB=10V

BDX67A

BDX67B

- 300 -

pF

BDX67C

BDX67

ton

toff

BDX67A

BDX67B

-

1

-

Switching Characteristics

VCC=12V

IC=-10 A

IB1=- IB2=0.04 A

BDX67C

BDX67

BDX67A

BDX67B

-

3.5

-

µs

BDX67C

BDX67

fhfe

Small Signal Current Gain

VCE=-3 V

IC=-5 A

BDX67A

BDX67B

-

50

- kHz

BDX67C

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

(1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit

05/10/2012

COMSET SEMICONDUCTORS

3/4

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