RFD4N06LSM 데이터 시트보기 (PDF) - Fairchild Semiconductor
부품명
상세내역
일치하는 목록
RFD4N06LSM Datasheet PDF : 5 Pages
| |||
RFD4N06L, RFD4N06LSM
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
5
4
3
2
1
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
TJ
TC
=
=
MAX RATED
25oC
1.0 OPERATION IN THIS AREA
LIMITED BY rDS(ON)
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
12
PULSE DURATION = 80µs
TC = 25oC
10
VGS = 10V
VGS = 7.5V
8
6
VGS = 5V
4
4.5V
4V
2
3.5V
3V
2.5V
0
2V
0
1
2
3
4
5
6
7
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. SATURATION CHARACTERISTICS
8
VDS = 10V
7 PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
6
5
TC = -40oC
4
3
TC = 25oC
TC = 125oC
2
TC = 125oC
1
TC = -40oC
0
1
2
3
4
5
6
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 5. TRANSFER CHARACTERISTICS
©2002 Fairchild Semiconductor Corporation
1.6
VGS = 5V
1.4 PULSE DURATION = 80µs
1.2
TC = 125oC
1.0
0.8
0.6
TC = 25oC
0.4
TC = -40oC
0.2
0
0
2
4
6
8
10
ID, DRAIN CURRENT (A)
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
RFD4N06L, RFD4N06LSM Rev. B
Share Link: 