F15P06 데이터 시트보기 (PDF) - Intersil
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F15P06 Datasheet PDF : 8 Pages
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RFD15P06, RFD15P06SM, RFP15P06
Absolute Maximum Ratings TC = 25oC Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Figure 5) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Pulsed Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFD15P06, RFD15P06SM, RFP15P06
-60
-60
15
Refer to Peak Current Curve
±20
Refer to UIS Curve
80
0.533
-55 to 175
300
260
UNITS
V
V
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at -10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(-10)
Qg(TH)
CISS
COSS
CRSS
RθJC
RθJA
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, TC = 150oC
VGS = ±20V
ID ≈ 15A, VGS = -10V, (Figure 9)
VDD = -30V, ID = 7.5A
RL = 4.0Ω, VGS = -10V
RG = 12.5Ω
(Figure 13)
VGS = 0V to -20V
VGS = 0V to -10V
VGS = 0V to -2V
VDD = -48V, ID = 15A,
RL = 3.20Ω
IG(REF) = 0.65mA
VDS = -25V, VGS = 0V
f = 1MHz
(Figure 12)
TO-220AB, TO-251AA, TO-252AA
TO-251AA, TO-252AA
TO-220AB
MIN TYP MAX UNITS
-60
-
-
V
-2.0
-
-4.0
V
-
-
-1
µA
-
-
-25
µA
-
-
±100
nA
-
-
0.150
W
-
-
60
ns
-
16
-
ns
-
30
-
ns
-
50
-
ns
-
20
-
ns
-
-
100
ns
-
-
150
nC
-
-
75
nC
-
-
3.5
nC
-
1150
-
pF
-
300
-
pF
-
56
-
pF
-
-
1.875 oC/W
-
-
100 oC/W
-
-
62
oC/ W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
Source to Drain Diode Voltage (Notte 2)
VSD
ISD = -15A
-
-
-1.5
Reverse Recovery Time
trr
ISD = -15A, dISD/dt = 100A/µs
-
-
125
NOTES:
2. Pulsed: pulse duration ≤ 300ms Max, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
UNITS
V
ns
4-104
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