RF071L4STF 데이터 시트보기 (PDF) - ROHM Semiconductor
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RF071L4STF Datasheet PDF : 9 Pages
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Super Fast Recovery Diode
RF071L4S
Datasheet
Series
Standard Fast Recovery
Dimensions (Unit : mm)
2.6±0.2
Land size figure (Unit : mm)
2.0
Application
General rectification
Features
1) Low switching loss
2) Low forward voltage
Construction
Silicon epitaxial planar type
83
1
2
0.1±0.02
0.1
1.5±0.2
2.0±0.2
ROHM : PMDS
JEDEC :SOD-106
1
2 Manufacture date
PMDS
Structure
Taping Dimensions (Unit : mm)
2.0±0.05
4.0±0.1
φ1.55±0.05
cathode
anode
0.3
2.9±0.1
4.0±0.1
φ1.55
2.8MAX
Absolute Maximum Ratings (Tl= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive Peak Reverse Voltage
VRM
Duty≦0.5
400
V
Reverse Voltage
VR
Direct Voltage
400
V
Average Current
Io
On glass epoxy substrate,
60Hz half sin wave , Resistive load Tl=120°C
1
A
Non-repetitive Forward Surge Current IFSM
60Hz half sin wave,
Non-repetitive at Tj=25°C
15
A
Operating Junction Temperature
Tj
-
150
°C
Storage Temperature
Tstg
-
55 to 150 °C
Electrical Characteristics (Tj = 25°C)
Parameter
Symbol
Forward Voltage
VF
Reverse Current
IR
Reverse Recovery Time
trr
Thermal Resistance
Rth(j-l)
Conditions
IF=0.7A
VR=400V
IF=0.5A, IR=1A, Irr=0.25×IR
Junction to Lead
Min. Typ. Max. Unit
- 1 1.25 V
- 0.01 10 A
- 20 25 ns
-
- 23 °C/W
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1/5
2017.02 - Rev.E
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