RF101A2S 데이터 시트보기 (PDF) - ROHM Semiconductor
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RF101A2S Datasheet PDF : 4 Pages
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Diodes
Fast recovery diode
RF101A2S
RF101A2S
zApplications
General rectification
zFeatures
1) Cylindrical mold type. (MSR)
2) Ultra Low VF.
3) Ultra high switching.
4) Low switching loss.
5) High ESD.
zExternal dimensions (Unit : mm)
CATHODE BAND (GREEN)
φ 0 .6 ± 0 .1
29±1
3 .0 ± 0 .2
29±1
ROHM : MSR
①
②
Manufacture Date
φ 2 .5 ± 0 .2
zConstruction
Silicon epitaxial planar
zTaping specifications (Unit : mm)
H2
A
BLUE
H2
E
L1
H1
L2
F
H1
IVORY
記Ma号rk 寸Sta法bd規ard格dim値en(smionm)
value (mm)
T-31 52.4±1.5
Ａ T-32 26.0+0.4
-0
B
Ｂ
5.0±0.5
Ｃ
0.5ＭＡＸ
Ｄ
0
C
Ｅ
50.4±0.4
Ｆ
0.3ＭＡＸ
H1
6.0±0.5
H2
5.0±0.5
L1-L2 0.6ＭＡＸ
＊H1(6mm)：BROWN
D
注c) f累: c積uピmッuチlaのtiv許e容pi差tcはh 2to0ピleッraチnでce±w1.5itmhm2以0下piとtcすhるthan ±1.5mm
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
VRM
200
V
Reverse voltage (DC)
VR
200
V
Average rectified forward current (*1)
Io
1
A
Forward current surge peak （t=100µs） IFSM
20
A
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55 to +150
℃
(*1) Mounted on epoxy board. 180°Half sine wave
zElectrical characteristic (Ta=25°C)
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Reverse recovery time
trr
Min. Typ. Max.
-
0.815 0.87
-
0.01 10
-
12
25
Unit
Conditions
V
IF=1.0A
µA
VR=200V
ns
IF=0.5A,IR=1A,Irr=0.25*IR
1/3
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