RD12MVP1(2006) 데이터 시트보기 (PDF) - Mitsumi
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RD12MVP1 Datasheet PDF : 7 Pages
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD12MVP1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS.
60
AMBIENT TEMPERATURE
*PCB: Glass epoxy (Size : 46.4 x 40.0mm, t=0.8 mm)
50
Thermal sheet: GELTEC COOH-4000(t=0.5mm)
40
30
On PCB with Termal sheet
and Heat-sink
(Size : 41 x 55mm, t=7.2 mm)
20
10
Vgs-Ids CHARACTERISTICS
7
Ta=+25°C
6
Vds=10V
Ids
5
4
3
2
1
0
0
40
80
120
160
200
AMBIENT TEMPERATURE Ta(deg:C.)
0
0123 456 7
Vgs(V)
Vds-Ids CHARACTERISTICS
9
Ta=+25°C
8
Vgs=7.5V
7
6
5
Vgs=6.5V
4
3
Vgs=5.5V
2
1
Vgs=4.5V
0
01234 56789
Vds(V)
Vds VS. Ciss CHARACTERISTICS
160
140
Ta=+25°C
f=1MHz
120
100
80
60
40
20
0
0
5
10
15
20
Vds(V)
Vds VS. Coss CHARACTERISTICS
160
140
Ta=+25°C
f=1MHz
120
100
80
60
40
20
0
0
5
10
15
20
Vds(V)
Vds VS. Crss CHARACTERISTICS
20
18
Ta=+25°C
f=1MHz
16
14
12
10
8
6
4
2
0
0
5
10
15
20
Vds(V)
RD12MVP1
MITSUBISHI ELECTRIC
2/7
1st Jun. 2006
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