RCD100N20 데이터 시트보기 (PDF) - ROHM Semiconductor
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RCD100N20 Datasheet PDF : 7 Pages
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RCD100N20
Data Sheet
Fig.7 Forward Transfer Admittance vs. Drain Current
10
VDS=10V
pulsed
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
0.1
Ta= - 25°C
0.01
0.01
0.1
1
10
100
Drain Current : ID [A]
Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
0.3
Ta=25°C
Pulsed
0.25
ID=10A
ID=5.0A
0.2
0.15
0.1
0 2 4 6 8 10 12 14 16 18 20
Gate-Source Voltage : VGS [V]
Fig.11 Dynamic Input Characteristics
15
Ta=25°C
VDD=100V
ID=10A
Pulsed
10
5
0
0
5 10 15 20 25 30 35 40
Total Gate Charge : Qg [nC]
Fig.8 Source Current vs. Source-Drain Voltage
100
VGS=0V
pulsed
10
Ta= 125°C
Ta= 75°C
Ta= 25°C
1
Ta= - 25°C
0.1
0.01
0.0
0.5
1.0
1.5
Source-Drain Voltage : VSD [V]
10000
1000
Fig.10 Switching Characteristics
VDD≒100V
VGS=10V
RG=10Ω
Ta=25°C
Pulsed
tf
100
td(off)
td(on)
10
tr
1
0.01
0.1
1
10
100
Drain Current : ID [A]
10000
1000
Fig.12 Typical Capacitance vs. Drain-Source Voltage
Ta=25°C
f=1MHz
VGS=0V
Ciss
100
Coss
10
Crss
1
0.01
0.1
1
10
100
Drain-Source Voltage : VDS [V]
1000
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4/6
2011.10 - Rev.A
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