RCD080N25 데이터 시트보기 (PDF) - ROHM Semiconductor
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RCD080N25 Datasheet PDF : 6 Pages
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RCD080N25
Electrical characteristics (Ta = 25C)
Parameter
Symbol Min.
Gate-source leakage
IGSS
-
Drain-source breakdown voltage V(BR)DSS 250
Zero gate voltage drain current
IDSS
-
Gate threshold voltage
Static drain-source on-state
resistance
VGS (th)
3
RDS
*
(on)
-
Forward transfer admittance
l Yfs l* 2.7
Input capacitance
Ciss
-
Output capacitance
Coss
-
Reverse transfer capacitance
Crss
-
Turn-on delay time
td(on) *
-
Rise time
tr *
-
Turn-off delay time
td(off) *
-
Fall time
tf *
-
Total gate charge
Qg *
-
Gate-source charge
Qgs *
-
Gate-drain charge
Qgd *
-
*Pulsed
Typ.
-
-
-
-
225
-
1440
80
40
30
40
40
15
25
10
10
Max.
100
-
10
5
300
-
-
-
-
-
-
-
-
-
-
-
Unit
Conditions
nA VGS=30V, VDS=0V
V ID=1mA, VGS=0V
A VDS=250V, VGS=0V
V VDS=10V, ID=1mA
m ID=4A, VGS=10V
S VDS=10V, ID=4A
pF VDS=25V
pF VGS=0V
pF f=1MHz
ns VDD 125V, ID=4A
ns VGS=10V
ns RL=31.25
ns RG=10
nC VDD 125V, ID=8A
nC VGS=10V
nC
Body diode characteristics (Source-Drain)
Parameter
Forward Voltage
Symbol Min.
VSD *
-
*Pulsed
Typ.
-
Max. Unit
Conditions
1.5
V Is=8A, VGS=0V
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/5
2011.11 - Rev.A
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