R6020FNX(2011) 데이터 시트보기 (PDF) - ROHM Semiconductor

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R6020FNX
(Rev.:2011)

10V Drive Nch MOSFET

ROHM Semiconductor 

Data Sheet

10V Drive Nch MOSFET

R6020FNX

 Structure

Silicon N-channel MOSFET

Features

1) Fast reverse recovery time (trr)

2) Low on-resistance.

3) Fast switching speed.

4) Gate-source voltage

　 VGSS garanteed to be ±30V .

5) Drive circuits can be simple.

6) Parallel use is easy.

 Dimensions (Unit : mm)

TO-220FM

10.0

φ3.2

4.5

2.8

(1) Gate

(2) Drain

(3) Source

1.2

1.3

0.8

2.54

2.54

0.75

2.6

(1) (2) (3)

Application

Switching

Inner circuit

Packaging specifications

Type

Package

Bulk

Basic ordering unit (pieces) 500

R6020FNX



Absolute maximum ratings (Ta  25°C)

Parameter

Symbol Limits

Unit

Drain-source voltage

Gate-source voltage

Drain current

Continuous

Pulsed

Source current

(Body Diode)

Continuous

Pulsed

Avalanche Current

Avalanche Energy

Power dissipation (Tc=25C)

Channel temperature

Range of storage temperature

VDSS

600

V

VGSS

30

V

ID *3

20

A

IDP *1

80

A

IS *3

20

A

ISP *1

80

A

IAS *2

10

A

EAS *2

26.7

mJ

PD

50

W

Tch

150

C

Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 L≒500μH, VDD=50V, RG=25Ω, starting Tch=25°C

*3 Limited only by maximum temperature allowed.

 Thermal resistance

Parameter

Channel to Case

Symbol

Rth (ch-c)

Limits

2.5

Unit

C / W

(1) Gate

(2) Drain

(3) Source

∗1

(1)

(2)

(3)

1 BODY DIODE

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1/6

2011.10 - Rev.A

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