R6015ANZ 데이터 시트보기 (PDF) - ROHM Semiconductor
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R6015ANZ Datasheet PDF : 6 Pages
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R6015ANZ
Electrical characteristics (Ta = 25C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
Static drain-source on-state
resistance
VGS (th)
RDS (on*)
Forward transfer admittance
l Yfs l*
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on) *
Rise time
tr *
Turn-off delay time
td(off) *
Fall time
tf *
Total gate charge
Qg *
Gate-source charge
Qgs *
Gate-drain charge
Qgd *
*Pulsed
Min.
-
600
-
2.95
-
4.5
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
0.23
-
1700
1120
80
50
50
150
60
50
8
20
Max.
100
-
100
4.15
0.3
-
-
-
-
-
-
-
-
-
-
-
Unit
Conditions
nA VGS=30V, VDS=0V
V ID=1mA, VGS=0V
A VDS=600V, VGS=0V
V VDS=10V, ID=1mA
ID=7.5A, VGS=10V
S VDS=10V, ID=7.5A
pF VDS=25V
pF VGS=0V
pF f=1MHz
ns VDD 300V, ID=7.5A
ns VGS=10V
ns RL=40
ns RG=10
nC VDD 300V
nC ID=15A
nC VGS=10V
Body diode characteristics (Source-Drain)
Parameter
Forward voltage
Symbol Min.
VSD *
-
*パルス
Typ.
-
Max.
1.5
Unit
Conditions
V IS=15A, VGS=0V
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/5
2011.10 - Rev.A
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