PSMN102-200Y 데이터 시트보기 (PDF) - NXP Semiconductors.
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PSMN102-200Y Datasheet PDF : 12 Pages
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NXP Semiconductors
PSMN102-200Y
N-channel TrenchMOS standard level FET
50
IS
(A)
40
30
20
10
003aab745
Tj = 150 °C
25 °C
104
C
(pF)
103
102
003aab747
Ciss
Coss
Crss
0
0
0.3
0.6
0.9
1.2
VSD (V)
Tj = 25 °C and 150 °C; VGS = 0 V
Fig 13. Source current as a function of source-drain
voltage; typical values
10
10−1
1
10
102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN102-200Y_1
Product data sheet
Rev. 01 — 29 April 2008
© NXP B.V. 2008. All rights reserved.
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