IRFF9130 데이터 시트보기 (PDF) - Intersil

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IRFF9130

-6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET

Intersil 

IRFF9130

Typical Performance Curves Unless Otherwise Specified (Continued)

1.25

ID = 250µA

1.15

1.05

0.95

0.85

0.75

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

1000

800

600

400

CISS

COSS

VGS = 0V, f = 1MHz

CISS = CGS + CGD

CRSS = CGD

COSS ≈ CDS + CGD

200

CRSS

0

0

-10

-20

-30

-40

-50

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

5

TJ = -55oC

TJ = 25oC

4

TJ = 125oC

3

2

1

PULSE DURATION = 80µs

0

0

-4

-8

-12

-16

-20

ID, DRAIN CURRENT (A)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT

-100

-10

TJ = 150oC

-1

TJ = 25oC

-0.1

-0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8

VSD, SOURCE TO DRAIN VOLTAGE (V)

FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

0

ID = -6.5A

-5

-10

VDS = -80V

VDS = -50V

-15

VDS = -20V

-20

-25

0

8

16

24

32

40

Qg(TOT), TOTAL GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

4-105

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