IRF234 데이터 시트보기 (PDF) - Intersil

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IRF234

8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs

Intersil 

IRF234, IRF235, IRF236, IRF237

Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNITS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Internal Drain Inductance

Internal Source Inductance

Therma Resistance Junction to Case

Therma Resistance Junction to Ambient

CISS VGS = 0V, VDS = 25V, f = 1.0MHz, (Figure 11) -

COSS

-

CRSS

-

LD Measured Between the Modified MOSFET

-

Contact Screw on the Symbol Showing the

Flange that is Closer to Internal Devices

Source and Gate Pins Inductances

and the Center of Die

D

LS Measured From The

Source Lead, 6mm

(0.25in) From the Flange G

and the Source Bonding

Pad

LD

-

LS

S

RθJC

-

RθJA Free Air Operation

-

600 -

pF

180 -

pF

52

-

pF

5.0 -

nH

12.5 -

nH

- 1.67 oC/W

-

30 oC/W

Source to Drain Diode Specifications

PARAMETER

Continuous Source to Drain Current

Pulse Source to Drain Current

(Note 3)

SYMBOL

TEST CONDITIONS

IS

Modified MOSFET

Symbol Showing the

D

ISDM Integral Reverse

P-N Junction Diode

G

MIN TYP MAX UNITS

-

-

8.1

A

-

-

32

A

S

Source to Drain Diode Voltage (Note 2)

Reverse Recovery Time

Reverse Recovered Charge

VSD

TJ = 25oC, ISD = 8.1A, VGS = 0V, (Figure 13) -

-

2.0

V

trr

TJ = 25oC, ISD = 8.1A, dISD/dt = 100A/µs

92 180 390 ns

QRR

TJ = 25oC, ISD = 8.1A, dISD/dt = 100A/µs

0.63 1.3 2.7 µC

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, starting TJ = 25oC, L = 4.5mH, RG = 25Ω, peak IAS = 8.1A. See Figures 15, 16.

5-3

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