PNA2602M 데이터 시트보기 (PDF) - Panasonic Corporation

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PNA2602M

Darlington Phototransistor

Panasonic Corporation 

Darlington Phototransistors

PNA2602M

Darlington Phototransistor

For optical control systems

Features

Darlington output, high sensitivity

Easy to combine light emission and photodetection on same

printed circuit board

Small size, thin side-view type package

Long lead and visible light cutoff design with PN205

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Collector to emitter voltage

Emitter to collector voltage

Collector current

Collector power dissipation

Operating ambient temperature

Storage temperature

Symbol Ratings Unit

VCEO

VECO

IC

PC

Topr

Tstg

20

V

5

V

30

mA

100

mW

–25 to +80 ˚C

–30 to +100 ˚C

ø3.5±0.2 4.5±0.3

Unit : mm

4.2±0.3

2.3

1.9

2-1.12

1.2

2-0.45±0.15

2-0.4±0.15

2-0.6±0.15

2-0.45±0.15

12

2.54

R1.75

1: Emitter

2: Collector

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Symbol

Conditions

min typ max Unit

Dark current

ICEO VCE = 10V

Sensitivity to infrared emitters SIR*1 VCE = 10V, H = 3.75 µW/cm2

0.1

0.5 µA

3.0 mA

Peak sensitivity wavelength

λP

VCE = 10V

850

nm

Acceptance half angle

θ

Measured from the optical axis to the half power point

35

deg.

Response time

tr, tf*2 VCC = 10V, IC = 1mA, RL = 100Ω

Collector saturation voltage VCE(sat)*1 IC = 100µA, H = 3.75 µW/cm2

150

µs

1.5 V

*1 Measurements were made using infrared light (λ = 940 nm) as a light source.

*2 Switching time measurement circuit

Sig.IN

50Ω

VCC

(Input pulse)

Sig.OUT

RL

(Output pulse) td

tr

90%

10%

tf

td : Delay time

tr : Rise time (Time required for the collector photo current to

increase from 10% to 90% of its final value)

tf : Fall time (Time required for the collector photo current to

decrease from 90% to 10% of its initial value)

1

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