F12N65 데이터 시트보기 (PDF) - PANJIT INTERNATIONAL
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F12N65 Datasheet PDF : 6 Pages
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PJP12N65 / PJF12N65
ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted )
Parameter
Static
Symbol
Te s t C o nd i ti o n
Drain-Source Breakdown Voltag e
Gate Threshold Voltage
Drain-Source On-State
Resistance
Zero Gate Voltage Drain
C urre nt
Gate Body Leakage
Dynamic
B V DSS
V GS(th)
R D S ( o n)
I DSS
I GSS
VGS=0V, I D=250uA
VDS=VGS, I D=250uA
VGS= 10V, I D= 6.0A
VDS=650V, VGS=0V
VGS=+30V, VDS=0V
To ta l Ga te C ha rg e
Gate-Source Charge
Gate-Drain Charge
Turn-On D e la y Ti me
Turn-On Ri s e Ti me
Turn-Off D e la y Ti me
Turn-Off F a ll Ti me
Input Capacitance
Output Capacitance
Reverse Tra nsfer
C a p a c i ta nc e
Source-Drain Diode
Qg
Q gs
Q gd
t d(on)
tr
t d(off)
tf
C iss
C oss
C rss
V DS=520V, ID=12A ,
V GS= 1 0 V
VDD=325V, ID =12A
V GS=1 0 V, RG=25Ω
VDS=25V, VGS=0V
f=1.0MHZ
Max. Diode Forward Current
IS
-
Max.Pulsed Source Current
I SM
-
Diode Forward Voltage
V SD
IS=12A , V GS=0V
Re ve rse Re co ve ry Ti me
t rr
Reverse Recovery Charge
Q rr
V GS=0V, IF=12A
d i /d t=1 0 0 A /us
NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
Mi n. Typ . Ma x. Uni ts
650
-
-
V
2.0
-
4.0
V
-
0.66
0.8
Ω
-
-
10
uA
-
-
+100 nΑ
-
46.8
62
-
9.2
-
nC
-
14.6
-
-
16.2
24
-
26.8
42
ns
-
56
98
-
24.6
38
-
1800 2450
-
145
195
pF
-
16
22
-
-
12
A
-
-
48
A
-
-
1.4
V
-
450
-
ns
-
5.0
-
uC
STAD-DEC.25.2009
PAGE . 2
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