PJ4800 데이터 시트보기 (PDF) - PANJIT INTERNATIONAL
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PJ4800 Datasheet PDF : 5 Pages
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PJ4800
30V N-Channel Enhancement Mode MOSFET
FEATURES
• RDS(ON), VGS@10V,IDS@8A=20mΩ
• RDS(ON), VGS@5.0V,IDS@6A=31mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for DC/DC Converters
• Fully Characterized Avalanche Voltage and Current
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request
MECHANICAL DATA
• Case: SOIC-08 Package
• Terminals : Solderable per MIL-STD-750D,Method 1036.3
• Marking : 4800
SOIC-08
8
7
6
5
1
2
3
4
PIN Assignment
1. Source
2. Source
3. Source
4. Gate
5. Drain
6. Drain
7. Drain
8. Drain
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continous Drain Current
TC=25oC
Pulsed Drain Current (1)
Avalanche Energy
L=0.1mH,I D=8A,VDD=25V
Power Dissipation
TC=25oC
TC=75oC
Operating Junction and Stroage Temperature Range
Junction-to-Ambient Thermal Resistance(PCB Mounted)2
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
SYMBOL
VDS
VGS
ID
I DM
EAS
PD
TJ,TSTG
RΘJA
VALUE
30
+20
8
32
3.2
3
2
-55 to +175
50
UNIT
V
V
A
A
mJ
W
oC
oC/W
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
December 01.2009-REV.00
PAGE . 1
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