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BU2114 데이터 시트보기 (PDF) - ROHM Semiconductor

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BU2114
ROHM
ROHM Semiconductor ROHM
BU2114 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Standard ICs
8-bit shift register and latch driver
BU2114 / BU2114F
The BU2114 and BU2114F are CMOS ICs with low power consumption, and are equipped with an 8-bit shift register
latch. Data in the shift register can be latched asynchronously. The outputs (O1 to O8) are open drain outputs
(because there is no protection diode, a maximum voltage above VDD, of up to 7V, can be applied), and one output
can drive 36 mA. A total output of up to 150 mA can be driven (when using static operation).
Applications
These are designed for a wide range of applications in microcomputer peripheral circuits, such as in industrial equip-
ment, office telephones, audio visual equipment, and expansion input and output boards.
Features
1) The CMOS configuration enables low power con-
sumption.
2) Open drain output.
3) Latch to 8-bit shift register provided, enabling drive
of up to 150mA. (ISINK = 36mA)
4) Cascade connections possible.
Absolute maximum ratings (unless otherwise noted, Ta = 25°C)
Parameter
Symbol
Limits
Unit
Applied voltage
VDD
– 0.3 ~ + 7.0
V
Input voltage
VIN
– 0.3 ~ VDD0.3
V
Operating temperature
Topr
– 25 ~ + 75
°C
Storage temperature
Tstg
– 55 ~ + 150
°C
Input protection diode current
ID
± 20
mA
BU2114
Power dissipation
Pd
BU2114F
11001
mW
4002
1 Power dissipation is reduced by 8.8mW for each increase in Ta of 1°C over 25°C.
2 Power dissipation is reduced by 3.2mW for each increase in Ta of 1°C over 25°C.
Recommended operating conditions (unless otherwise noted, Ta = 25°C)
Parameter
Symbol Min. Typ. Max.
Unit
Recommend voltage
VDD
4.5
5.0
5.5
V
Input voltage
VIN
0
VDD
V
Output voltage
VOUT
0
VDD
V
Not designed for radiation resistance.
Conditions
SIN, CK, LATCH, EN, RST
SOUT
1

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