PDTC114T(2006) 데이터 시트보기 (PDF) - Philips Electronics
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PDTC114T Datasheet PDF : 11 Pages
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Philips Semiconductors
PDTC114T series
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = open
7. Characteristics
Table 8: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
ICEO
collector-emitter
cut-off current
VCE = 30 V; IB = 0 A
VCE = 30 V; IB = 0 A;
Tj = 150 °C
IEBO
emitter-base cut-off VEB = 5 V; IC = 0 A
current
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 1 mA
IC = 10 mA; IB = 0.5 mA
R1
bias resistor 1 (input)
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
Min Typ Max Unit
-
-
100 nA
-
-
1
µA
-
-
50 µA
-
-
100 nA
200 -
-
-
-
150 mV
7
10 13 kΩ
-
-
2.5 pF
600
(1)
hFE
400
(2)
(3)
200
006aaa552
1
VCEsat
(V)
10−1
(1)
(2)
(3)
006aaa553
0
10−1
1
10
102
IC (mA)
VCE = 5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
10−2
10−1
1
10
102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
PDTC114T_SER_8
Product data sheet
Rev. 08 — 9 February 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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