PC713V0NIPX 데이터 시트보기 (PDF) - Sharp Electronics
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PC713V0NIPX Datasheet PDF : 14 Pages
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■ Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Symbol Rating
Unit
Forward current
IF
*1 Peak forward current IFM
50
mA
1
A
Reverse voltage
VR
6
V
Power dissipation
P
70
mW
Collector-emitter voltage VCEO *4 80
V
Emitter-collector voltage VECO
6
V
Collector-base voltage VCBO *4 80
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
50
mA
Collector power dissipation PC
150
mW
Total power dissipation Ptot
170
Operating temperature
Topr −25 to +100
Storage temperature
Tstg −40 to +125
*2 Isolation voltage
Viso (rms)
5
*3 Soldering temperature
Tsol
260
*1 Pulse width≤100µs, Duty ratio : 0.001
*2 40 to 60%RH, AC for 1minute, f=60Hz
*3 For 10s
*4 Up to Date code "P7" (July 2002) VCEO : 35V, VCBO : 35V.
mW
˚C
˚C
kV
˚C
PC713VxNSZX Series
■ Electro-optical Characteristics
Parameter
Symbol
Conditions
Forward voltage
VF
IF=20mA
Peak forward voltage
Input
VFM
Reverse current
IR
IFM=0.5A
VR=4V
Terminal capacitance
Ct
V=0, f=1kHz
Collector dark current ICEO
VCE=50V, IF=0
Collector-emitter breakdown voltage
Output
BVCEO
Emitter-base breakdown voltage BVEBO
IC=0.1mA, IF=0
IE=10µA, IF=0
Collector-base breakdown voltage BVCBO
IC=0.1mA, IF=0
Current transfer ratio
IC
IF=5mA, VCE=5V
Collector-emitter saturation voltage VCE (sat)
IF=20mA, IC=1mA
Transfer Isolation resistance
RISO
charac- Floating capacitance
Cf
teristics Cut-off frequency
fC
DC500V, 40 to 60%RH
V=0, f=1MHz
VCE=5V, IC=2mA, RL=100Ω −3dB
Rise time
Response time
tr
Fall time tf
VCE=2V, IC=2mA, RL=100Ω
*5 Up to Date code "P7" (July 2002) BVCEO≥35V and BVCBO≥35V.
MIN.
−
−
−
−
−
*5 80
6
*5 80
2.5
−
5×1010
−
−
−
−
TYP.
1.2
−
−
30
−
−
−
−
−
0.1
1×1011
0.6
80
4
3
MAX.
1.4
3.0
10
250
100
−
−
−
30
0.2
−
1.0
−
18
18
(Ta=25˚C)
Unit
V
V
µA
pF
nA
V
V
V
mA
V
Ω
pF
kHz
µs
µs
Sheet No.: D2-A04301EN
4
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