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RFM7N35

7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs

Intersil 

Semiconductor

July 1998

RFM7N35, RFM7N40,

RFP7N35, RFP7N40

7A, 350V and 400V, 0.75 Ohm,

N-Channel Power MOSFETs

Features

• 7A, 350V and 400V

• rDS(ON) = 0.75Ω

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFM7N35

TO-204AA

RFM7N35

RFM7N40

TO-204AA

RFM7N40

RFP7N35

TO-220AB

RFP7N35

RFP7N40

TO-220AB

RFP7N40

NOTE: When ordering, use the entire part number.

Description

These are N-Channel enhancement mode silicon gate

power field effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA17424.

Symbol

D

G

S

Packaging

DRAIN

(FLANGE)

JEDEC TO-204AA

JEDEC TO-220AB

DRAIN

(TAB)

SOURCE

DRAIN

GATE

GATE (PIN 1)

SOURCE (PIN 2)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

Copyright © Harris Corporation 1998

5-1

File Number 1536.2

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