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76145P

75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

Fairchild Semiconductor 

HUF76145P3, HUF76145S3S

Electrical Specifications TA = 25oC, Unless Otherwise Specified (Continued)

PARAMETER

SYMBOL

TEST CONDITIONS

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time

tON

Turn-On Delay Time

td(ON)

Rise Time

tr

Turn-Off Delay Time

td(OFF)

Fall Time

tf

Turn-Off Time

tOFF

GATE CHARGE SPECIFICATIONS

VDD = 15V, ID ≅ 75A,

RL = 0.20Ω, VGS = 10V,

RGS = 2.2Ω

(Figure 16)

Total Gate Charge

Gate Charge at 5V

Threshold Gate Charge

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

CAPACITANCE SPECIFICATIONS

Qg(TOT)

Qg(5)

Qg(TH)

Qgs

Qgd

VGS = 0V to 10V

VGS = 0V to 5V

VGS = 0V to 1V

VDD = 15V,

ID ≅ 75A,

RL = 0.20Ω

Ig(REF) = 1.0mA

(Figure 14)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

CISS

COSS

CRSS

VDS = 25V, VGS = 0V,

f = 1MHz

(Figure 13)

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

Source to Drain Diode Voltage

Reverse Recovery Time

Reverse Recovered Charge

VSD

trr

QRR

ISD = 75A

ISD = 75A, dISD/dt = 100A/µs

ISD = 75A, dISD/dt = 100A/µs

Typical Performance Curves

MIN

TYP

MAX UNITS

-

-

110

ns

-

16

-

ns

-

57

-

ns

-

53

-

ns

-

38

-

ns

-

-

135

ns

-

130

156

nC

-

73

88

nC

-

4.65

5.6

nC

-

12.30

-

nC

-

40.00

-

nC

-

4900

-

pF

-

2520

-

pF

-

560

-

pF

MIN

TYP

MAX UNITS

-

-

1.25

V

-

-

115

ns

-

-

255

nC

1.2

1.0

0.8

0.6

0.4

0.2

0

0

25

50

75

100

125

150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

80

VGS = 10V

60

VGS = 4.5V

40

20

0

25

50

75

100

125

150

175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

©2001 Fairchild Semiconductor Corporation

HUF76145P3, HUF76145S3S Rev. B

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