BS62LV2563SC-70 데이터 시트보기 (PDF) - Brilliance Semiconductor

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BS62LV2563SC-70

Very Low Power/Voltage CMOS SRAM 32K X 8 bit

Brilliance Semiconductor 

BSI

BS62LV2563

„ DC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC)

PARAMETER

NAME

VIL

VIH

IIL

IOL

VOL

VOH

PARAMETER

Guaranteed Input Low

Voltage(2)

Guaranteed Input High

Voltage(2)

Input Leakage Current

Output Leakage Current

Output Low Voltage

Output High Voltage

TEST CONDITIONS

Vcc=3.0V

Vcc=3.0V

Vcc = Max, VIN = 0V to Vcc

Vcc = Max, CE = VIH, or OE = VIH,

VI/O = 0V to Vcc

Vcc = Max, IOL = 2mA

Vcc = Min, IOH = -1mA

Vcc=3.0V

Vcc=3.0V

ICC

Operating Power Supply

Current

CE = VIL, IDQ = 0mA, F = Fmax(3)

Vcc=3.0V

MIN. TYP. (1) MAX. UNITS

-0.5

--

0.8

V

2.0

--

Vcc+0.2

V

--

--

1

uA

--

--

1

uA

--

--

0.4

V

2.4

--

--

V

--

--

20

mA

ICCSB

Standby Current-TTL

CE = VIH, IDQ = 0mA

Vcc=3.0V

--

--

1

mA

ICCSB1

CE Њ Vcc-0.2V,

Standby Current-CMOS VIN Њ Vcc - 0.2V or VIN Љ 0.2V Vcc=3.0V

--

0.01

0.2

uA

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/tRC .

„ DATA RETENTION CHARACTERISTICS ( TA = 0oC to + 70oC)

SYMBOL

PARAMETER

TEST CONDITIONS

VDR

ICCDR

tCDR

tR

Vcc for Data Retention

Data Retention Current

Chip Deselect to Data

Retention Time

Operation Recovery Time

CE Њ Vcc - 0.2V

VIN Њ Vcc - 0.2V or VIN Љ 0.2V

CE Њ Vcc -0.2V

VIN Њ Vcc - 0.2V or VIN Љ 0.2V

See Retention Waveform

1. Vcc = 1.5V, TA = + 25OC

2. tRC = Read Cycle Time

MIN. TYP. (1) MAX.

1.5

--

--

--

0

TRC (2)

0.01

--

--

0.20

--

--

UNITS

V

uA

ns

ns

„ LOW VCC DATA RETENTION WAVEFORM (1) ( CE Controlled )

Vcc

CE

Vcc

t CDR

VIH

Data Retention Mode

VDR ≥ 1.5V

CE ≥ Vcc - 0.2V

Vcc

tR

VIH

R0201-BS62LV2563

3

Revision 2.2

April 2001

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