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RFK70N06 데이터 시트보기 (PDF) - Intersil

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RFK70N06 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Data Sheet
RFK70N06
September 1998 File Number 4331.1
70A, 60V, 0.014 Ohm, N-Channel Power
MOSFET
The RFK70N06 N-Channel power MOSFET is manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits
gives optimum utilization of silicon, resulting in outstanding
performance. They are designed for use in applications such
as switching regulators, switching converters, motor drivers,
relay drivers and emitter switches for bipolar transistors.
These transistors can be operated directly from integrated
circuits.
Formerly developmental type TA49007.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFK70N06
TO-204AE
RFK70N06
NOTE: When ordering, use the entire part number.
Features
• 70A, 60V
• rDS(ON) = 0.014
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
TO-204AE
GATE (PIN 1)
SOURCE (PIN 2)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

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