TPR700 데이터 시트보기 (PDF) - GHz Technology
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TPR700 Datasheet PDF : 3 Pages
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TPR 700
700 Watts, 50 Volts, Pulsed
Avionics 1030 - 1090 MHz
GENERAL DESCRIPTION
The TPR 700 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030-1090 MHz. The
device has gold thin-film metallization for proven highest MTTF. The
transistor includes input returns for fast rise time. Low thermal resistance
package reduces junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2
2050 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
65 Volts
3.5 Volts
55 Amps
- 65 to + 200oC
+ 200oC
CASE OUTLINE
55KT, Style 1
Common Base
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pin
Pg
ηc
tr
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Rise Time
Load Mismatch Tolerance
F = 1090 MHz
Vcc = 50 Volts
PW = 10 µsec
DF = 1%
F = 1090 MHz
MIN
700
6.7
TYP MAX UNITS
Watts
150 Watts
dB
43
%
70
ns
30:1
BVebo3
BVces
hFE
θjc2
Emitter to Base Breakdown
Ie = 50mA
3.5
Collector to Emitter Breakdown Ic = 100mA
65
DC - Current Gain
Ic = 1000mA, Vce = 5 V 10
Thermal Resistance
Volts
Volts
0.08 oC/W
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
3: Cannot measure due to input return
Issue February 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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