BS616UV4020DI 데이터 시트보기 (PDF) - Brilliance Semiconductor

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BS616UV4020DI

Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable

Brilliance Semiconductor 

BSI

BS616UV4020

„ DC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC)

PARAMETER

NAME

VIL

VIH

IIL

PARAMETER

Guaranteed Input Low

Voltage(2)

Guaranteed Input High

Voltage(2)

Input Leakage Current

TEST CONDITIONS

Vcc = Max, VIN = 0V to Vcc

Vcc=2.0V

Vcc=3.0V

Vcc=2.0V

Vcc=3.0V

MIN.

-0.5

-0.5

1.4

2.0

--

TYP. (1) MAX.

--

0.6

0.8

--

Vcc+0.2

Vcc+0.2

--

1

UNITS

V

V

uA

IOL

Output Leakage Current

Vcc = Max, CE1 = VIH or CE2=VIL

or OE = VIH, VI/O = 0V to Vcc

--

--

1

uA

VOL

Output Low Voltage

Vcc = Max, IOL = 1mA

VOH

Output High Voltage

Vcc = Min, IOH = -0.5mA

Vcc=2.0V

--

--

0.4

Vcc=3.0V

--

--

0.4

V

Vcc=2.0V

1.6

--

--

Vcc=3.0V

2.4

--

--

V

ICC

Operating Power Supply Vcc = Max, CE1= VIL, CE2=VIH

Current

IDQ = 0mA, F = Fmax(3)

Vcc=2.0V

--

Vcc=3.0V

--

--

--

15

20

mA

ICCSB

Standby Current - TTL

Vcc = Max, CE1 = VIH or CE2=VIL

IDQ = 0mA

Vcc=2.0V

Vcc=3.0V

--

--

--

--

0.6

1

mA

Vcc = Max, CE1ЊVcc-0.2V or

Vcc=2.0V

--

0.2

1

ICCSB1

Standby Current -CMOS CE2Љ0.2V ;VINЊ Vcc - 0.2V or

uA

VINЉ0.2V

Vcc=3.0V

--

0.25

1.5

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/tRC .

R0201-BS616UV4020

4

Revision 2.4

April 2002

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