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CMKD6263DO

SURFACE MOUNT SILICON DUAL OPPOSING HIGH VOLTAGE SCHOTTKY DIODE

Central Semiconductor 

CMKD6263DO

SURFACE MOUNT SILICON

DUAL OPPOSING

HIGH VOLTAGE

SCHOTTKY DIODE

SOT-363 CASE

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMKD6263DO

contains two (2) galvanically isolated, high voltage, low

VF silicon Schottky diodes with an opposing Anode/

Cathode configuration, epoxy molded in a SOT-363

surface mount package. This device has been designed

for fast switching applications requiring a low forward

voltage drop.

MARKING CODE: 63D

FEATURES:

• Dual Opposing (DO) Schottky Diodes

• High Voltage (70V)

MAXIMUM RATINGS: (TA=25°C)

Peak Repetitive Reverse Voltage

Continuous Forward Current

Peak Forward Surge Current, tp=1.0s

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

• Low Forward Voltage

• Galvanically Isolated

SYMBOL

VRRM

IF

IFSM

PD

TJ, Tstg

ΘJA

70

15

50

250

-65 to +150

500

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS

MIN

TYP

MAX

IR

BVR

VF

CJ

trr

VR=50V

IR=10μA

70

IF=1.0mA

VR=0, f=1.0MHz

IR=IF=10mA, Irr=1.0mA, RL=100Ω

10

200

395

410

2.0

5.0

UNITS

V

mA

mA

mW

°C

°C/W

UNITS

nA

V

mV

pF

ns

R4 (11-December 2015)

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