NTE85 데이터 시트보기 (PDF) - NTE Electronics

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NTE85

Silicon NPN Transistor General Purpose Amplifier

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

DC Current Gain

Base–Emitter ON Voltage

hFE VCE = 2V, IC = 50mA, Note 3 100 – 300

VBE(on) IC = 100mA, VCE = 2V,

Note 3

0.5 – 1.0 V

Collector–Emitter Saturation Voltage VCE(sat) IC = 100mA, IB = 5mA,

Note 3

–

– 0.6 V

Current Gain–Bandwidth Product

Collector–Base Capacitance

fT IC = 50mA, VCE = 2V

100 –

Ccb VCB = 10V, IE = 0, f = 1MHz –

–

– MHz

12 pF

Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%

.210

(5.33)

Max

.500

(12.7)

Min

.135 (3.45) Min

Seating Plane

.021 (.445) Dia Max

.100 (2.54)

ECB

.050 (1.27)

.165

(4.2)

Max

.105 (2.67) Max

.205 (5.2) Max

.105 (2.67) Max

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