NTE172A 데이터 시트보기 (PDF) - NTE Electronics

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NTE172A

Silicon NPN Transistor Darlington Preamp, Medium Speed Switch

NTE Electronics 

NTE172A

Silicon NPN Transistor

Darlington Preamp, Medium Speed Switch

Description:

The NTE172A is a silicon NPN Darlington transistor in a TO92 type case designed for preamplifier

input stages requiring input impedances of several megohms or extremely low level, high gain, low

noise amplifier applications.

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V

Collector Current, IC

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA

Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA

Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4mW/°C

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Lead Temperature (During Soldering, 1/16” ±1/32” from case for 10sec max.), TL . . . . . . . . +260°C

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Static Characteristics

Collector–Base Breakdown Voltage V(BR)CBO IC = 0.1µA, IE = 0

40 –

–

V

Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0

40 –

–

V

Emitter–Base Breakdown Voltage V(BR)EBO IE = 0.1µA, IE = 0

12 –

–

V

DC Current Gain

hFE VCE = 5V, IC = 2mA

7000 – 70000

VCE = 5V, IC = 100mA

20000 –

–

Collector Cutoff Current

ICBO VCB = 40V, IE = 0

–

– 100

nA

VCB = 40V, IE = 0, TA = +100°C

–

– 20

µA

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