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NTE154

Silicon NPN Transistor High Voltage Video Output

NTE Electronics 

NTE154

Silicon NPN Transistor

High Voltage Video Output

Description:

The NTE154 is a silicon NPN transistor in a TO39 type package designed for use as a video output

to drive a color CRT.

Features:

D High Voltage: VCEO = 300V Min @ IC = 5mA

D Low Capacitance: Cob = 3pF Max @ VCB = 20V

D High Frequency: ft = 50MHz Min @ IC = 15mA

D High Power Dissipation: PD = 7W @ TC = +25°C

Absolute Maximum Ratings: (Note 1)

Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V

Collector to Emitter Voltage (Note 2), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V

Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V

Total Power Dissipation (Note 3, Note 4), PD

TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W

TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W

Operating Junction Temperature, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Lead Temperature (During Soldering, 60sec), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C

Note 1. These ratings are limiting values above which the serviceability of this device may be impaired.

Note 2. This rating refers to a high current point where collector to emitter voltage is lowest.

Note 3. These ratings are steady state limits.

Note 4. These ratings give a maximum junction temperature of +200°C and junction to case thermal

resistance of +25°C/W (derating factor of 40mW/°C); junction to ambient thermal resistance

of +175°C/W (derating factor of 5.71mW/°C).

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