TC429 데이터 시트보기 (PDF) - TelCom Semiconductor Inc => Microchip

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TC429

6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER

TelCom Semiconductor Inc => Microchip 

6A SINGLE HIGH-SPEED,

CMOS POWER MOSFET DRIVER

1

TC429

ELECTRICAL CHARACTERISTICS: Over operating temperature with 7V ≤ VDD ≤ 18V, unless otherwise specified.

Symbol

Parameter

Test Conditions

Min

2 Typ Max Unit

Input

VIH

VIL

IIN

Output

Logic 1, High Input Voltage

Logic 0, Low Input Voltage

Input Current

0V ≤ VIN ≤ VDD

2.4

—

—V

—

—

0.8 V

– 10

—

10 µA

VOH

High Output Voltage

VOL

Low Output Voltage

RO

Output Resistance

Switching Time (Note 1)

VIN = 0.8V,

IOUT = 10 mA, VDD = 18V

VIN = 2.4V,

IOUT = 10 mA, VDD = 18V

VDD – 0.025 —

—V

—

— 0.025 V

3

—

—

5

Ω

—

—

5

tR

tF

tD1

tD2

Power Supply

Rise Time

Fall Time

Delay Time

Delay Time

Figure 1, CL = 2500pF

Figure 1, CL = 2500pF

Figure 1

Figure 1

—

—

—

—

70

70

nsec

nsec

4

—

—

100 nsec

—

—

120 nsec

IS

Power Supply Current

NOTE: 1. Switching times guaranteed by design.

VIN = 3V

—

VIN = 0V

—

SWITCHING SPEED

—

12 mA

—

1

5

VDD = 18V

1

8

1 µF

0.1 µF

2

INPUT

+5V

TC429

4

5

6

OUTPUT

7

CL= 2500 pF

INPUT: 100 kHz, square wave

tRISE = tFALL ≤ 10 nsec

90%

INPUT

0V

18V

OUTPUT

0V

10%

tD1

90%

10%

tF

tD2

tR

90%

10%

Figure 1. Inverting Driver Switching Time Test Circuit

TELCOM SEMICONDUCTOR, INC.

6

7

8

4-177

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