NJ88C30KAMP 데이터 시트보기 (PDF) - Zarlink Semiconductor Inc
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NJ88C30KAMP Datasheet PDF : 9 Pages
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NJ88C30
ELECTRICAL CHARACTERISTICS
Test conditions (unless otherwise stated):
TAMB = –30°C to +70°C, VDD = 5V ±0·5V
Characteristic
Pin
Value
Units
Min. Typ. Max.
Conditions
Supply current
Crystal Oscillator
Frequency
External input level
High level
Low level
VCO Input
Input sensitivity
Slew rate
Input impedance
DATA, DATA TRANSFER and
CLOCK Inputs
High level
Low level
Rise, fall time
Data set-up time
Clock frequency
Transfer pulse width
CRYSTAL MONITOR Output
Current sink
COMP FREQ, LD, P DIV
Current sink
f UP / f DN
Current sink
Current source
8
4
7
mA 1VRMS VCO input at 200MHz
and fXTAL = 10MHz
6, 7
10 15 MHz Parallel resonant,
fundamental crystal
6
1
Vrms AC coupled
6
VDD21
6
V DC coupled
1
V DC coupled
10
1
10
4
10
5pF//
10k
Vrms At 200MHz, see Fig. 3
V/µs
2, 3, 4
2. 3, 4
2, 3
3, 4
3
2
VDD21
200
500
5
0·8
9, 11, 14 1·6
12
0·8
13
0·8
V
1
V
200 ns
ns See Fig. 4
2 MHz
ns
mA VOUT = 0·5V
mA VOUT = 0·5V
mA VOUT = 0·5V
mA VOUT = VDD20·5V
1·6
1·4
GUARANTEED OPERATING AREA *
1·2
1·0
0·8
0·6
0·4
TYPICAL
0·2
0
0
50
100
150
200
FREQUENCY (MHz)
Fig. 3 Input sensitivity
* Tested as
specified in
Table of
Electrical
Characteristics
2
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