NCV8842PWR2G 데이터 시트보기 (PDF) - ON Semiconductor
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NCV8842PWR2G Datasheet PDF : 16 Pages
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Vout (3.3 V)
D1
L1
27 mH
C1
0.1 mF
R3
D2
162
C3 +
100 mF
R2
100
NCV8842
R6
100k
U1
Vsw
Vin
SHDNB
BOOST
NC
NC
NC
NC
NC
NC
NC
NC
SYNC
Vc
GND
Vfb
NCV8842
C5
0.1 mF
C4
0.1 mF
Vin (7 V to 16 V)
+ C2
330 mF
SHDNB
SYNC
Figure 1. Application Diagram, 7 V − 16 V to 3.3 V @ 1.0 A Converter
MAXIMUM RATINGS*
Rating
Value
Unit
Peak Transient Voltage (31 V Load Dump @ VIN = 14 V)
45
V
Operating Junction Temperature Range, TJ
−40 to 150
°C
Lead Temperature Soldering:
Reflow: (Note 1)
260 peak
°C
(Note 2)
Storage Temperature Range, TS
ESD
−65 to +150
°C
(Human Body Model)
2.0
kV
(Machine Model)
200
V
(Charge Device Model)
>1.0
kV
Package Thermal Resistance
SO−16W EPAD Junction−to−Case, RqJC
16
SO−16W EPAD Junction−to−Ambient, RqJA (Note 3)
35
DFN−18 Junction−to−Ambient, RqJA (Note 3)
38
SO−8 Junction−to−Ambient, RqJA (Note 4)
100
°C/W
°C/W
°C/W
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*The maximum package power dissipation must be observed.
1. 60 second maximum above 183°C.
2. −5°C/0°C allowable conditions.
3. 4 layer board, 1 oz copper outer layers, 0.5 oz copper inner layers, 600 sqmm copper area
4. 1 in2, 1 oz copper area used for heatsinking.
MAXIMUM RATINGS (Voltages are with respect to GND)
Pin Name
VIN (DC)*
BOOST
VMax
40 V
40 V
VMIN
−0.3 V
−0.3 V
ISOURCE
N/A
N/A
ISINK
4.0 A
100 mA
VSW
VC
SHDNB
40 V
7.0 V
7.0 V
−0.6 V/−1.0 V, t < 50 ns
−0.3 V
−0.3 V
4.0 A
1.0 mA
1.0 mA
10 mA
1.0 mA
1.0 mA
SYNC
7.0 V
−0.3 V
1.0 mA
1.0 mA
VFB
*See table above for load dump.
7.0 V
−0.3 V
1.0 mA
1.0 mA
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