NCP694DSAN08T1G(2010) 데이터 시트보기 (PDF) - ON Semiconductor
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NCP694DSAN08T1G Datasheet PDF : 17 Pages
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NCP694
ELECTRICAL CHARACTERISTICS FOR FIX VERSION (Vin = Vout(nom.) + 1.0 V, VCE = Vin, Cin = 4.7 mF, Cout = 4.7 mF, TA =
25°C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Output Voltage (TA = 25°C, Iout = 100 mA, Vin−Vout = 1 V)
0.8 V
1.0 V
1.2 V
2.5 V
3.3 V
Vout
V
0.770 0.8 0.830
0.970 1.0 1.030
1.170 1.2 1.030
2.450 2.5 2.550
3.234 3.3 3.366
Output Current (Vin−Vout = 1 V)
Input voltage
Line Regulation (Iout = 100 mA)
Load Regulation (Iout = 1 mA to 300 mA, Vin = Vout + 2.0 V)
Load Regulation (Iout = 1 mA to 1 A, Vin = Vout + 2.0 V)
Supply Current (Iout = 0 A, (Vin − Vout) = 1 V, VCE = Vin)
Standby Current (VCE = 0V, Vin = 6.0 V)
Short Current Limit (Vout = 0 V)
Output Voltage Temperature Coefficient
Enable Input Threshold Voltage
(Voltage Increasing, Output Turns On, Logic High)
(Voltage Decreasing, Output Turns Off, Logic Low)
Iout
1
A
Vin
1.4
6.0
V
Regline
−
0.05
0.2
%/V
Regload03
−15
−2
15
mV
Regload1
−
−3
−
mV
Iss
60
100
mA
Istby
0.1
1.0
mA
Ish
250
mA
Tc
−
$100
− ppm/°C
VthCE
V
1.0
−
6
0
−
0.4
Enable Pull−down Current
100
220
nA
Drop Output Voltage (TA = 25°C, Iout = 300 mA)
0.8 V Output voltage Vout (V)
1.0 V
1.2 V
2.5 V
3.3 V
Vin−Vout
V
0.33 0.570
0.22 0.470
0.18 0.320
0.10 0.150
0.05 0.100
Drop Output Voltage (TA = 25°C, Iout = 1A)
0.8 V Output voltage Vout (V)
1.0 V
1.2 V
2.5 V
3.3 V
Vin−Vout
V
0.72
0.64
0.56
0.32
0.18
Ripple Rejection (Ripple 200 mVpp, Iout =100 mA, f = 1 kHz)
PSRR
70
Output Noise (BW = 10 Hz to 100 kHz, Iout = 1 mA)
Vnoise
30
Thermal Shutdown Temperature/Hysteresis
Tshd/Hyst
150/30
RDS(on) of additional output transistor (D version only)
RDS(on)
30
2. Maximum package power dissipation limits must be observed.
3. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
dB
mVrms
°C
W
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