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NCV5104 데이터 시트보기 (PDF) - ON Semiconductor

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NCV5104
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NCV5104 Datasheet PDF : 15 Pages
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NCP5104, NCV5104
ELECTRICAL CHARACTERISTIC (VCC = Vboot = 15 V, VGND = Vbridge, −40°C < TJ < 125°C, Outputs loaded with 1 nF)
TJ −40°C to 125°C
Rating
Symbol
Min
Typ
Max
OUTPUT SECTION
Units
Output high short circuit pulsed current VDRV = 0 V, PW v 10 ms (Note 1)
IDRVsource
Output low short circuit pulsed current VDRV = Vcc, PW v 10 ms (Note 1)
IDRVsink
Output resistor (Typical value @ 25°C) Source
ROH
Output resistor (Typical value @ 25°C) Sink
ROL
High level output voltage, VBIAS−VDRV_XX @ IDRV_XX = 20 mA
VDRV_H
Low level output voltage VDRV_XX @ IDRV_XX = 20 mA
VDRV_L
DYNAMIC OUTPUT SECTION
250
mA
500
mA
30
60
W
10
20
W
0.7
1.6
V
0.2
0.6
V
Turn−on propagation delay (Vbridge = 0 V) (Note 2)
Turn−off propagation delay (Vbridge = 0 V or 50 V) (Note 3)
Shutdown propagation delay, when Shutdown is enabled
Shutdown propagation delay, when Shutdown is disabled
Output voltage rise time (from 10% to 90% @ VCC = 15 V) with 1 nF load
Output voltage fall time (from 90% to 10% @ VCC = 15 V) with 1 nF load
Propagation delay matching between the High side and the Low side
@ 25°C (Note 4)
tON
tOFF
tsd_en
tsd_dis
tr
tf
Dt
620
800
ns
100
170
ns
100
170
ns
620
800
ns
85
160
ns
35
75
ns
10
45
ns
Internal fixed dead time (Note 5)
DT
400
520
650
ns
INPUT SECTION
Low level input voltage threshold
Input pull−down resistor (VIN < 0.5 V)
High level input voltage threshold
Logic “1” input bias current @ VIN = 5 V @ 25°C
Logic “0” input bias current @ VIN = 0 V @ 25°C
SUPPLY SECTION
VIN
0.8
V
RIN
200
kW
VIN
2.3
V
IIN+
5
25
mA
IIN−
2.0
mA
Vcc UV Start−up voltage threshold
Vcc_stup
8.0
8.9
9.8
V
Vcc UV Shut−down voltage threshold
Vcc_shtdwn
7.3
8.2
9.0
V
Hysteresis on Vcc
Vcc_hyst
0.3
0.7
V
Vboot Start−up voltage threshold reference to bridge pin
(Vboot_stup = Vboot − Vbridge)
Vboot_stup
8.0
8.9
9.8
V
Vboot UV Shut−down voltage threshold
Vboot_shtdwn 7.3
8.2
9.0
V
Hysteresis on Vboot
Vboot_shtdwn 0.3
0.7
V
Leakage current on high voltage pins to GND
(VBOOT = VBRIDGE = DRV_HI = 600 V)
IHV_LEAK
5
40
mA
Consumption in active mode (Vcc = Vboot, fsw = 100 kHz and 1 nF load on
ICC1
4
5
mA
both driver outputs)
Consumption in inhibition mode (Vcc = Vboot)
ICC2
250
400
mA
Vcc current consumption in inhibition mode
ICC3
200
mA
Vboot current consumption in inhibition mode
ICC4
50
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Parameter guaranteed by design.
2. TON = TOFF + DT
3. Turn−off propagation delay @ Vbridge = 600 V is guaranteed by design.
4. See characterization curve for Dt parameters variation on the full range temperature.
5. Timing diagram definition see: Figure 4, Figure 5 and Figure 6.
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