NCP1052 데이터 시트보기 (PDF) - ON Semiconductor

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NCP1052

Monolithic High Voltage Gated Oscillator Power Switching Regulator

ON Semiconductor 

NCP1050, NCP1051, NCP1052, NCP1053, NCP1054, NCP1055

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Power Switch and Startup Circuit

Drain Voltage Range

Drain Current Peak During Transformer Saturation

VDS

*0.3 to 700

V

IDS(pk)

2.0 Ilim Max

A

Power Supply/VCC Bypass and Control Input

Voltage Range

Current

Thermal Characteristics

P Suffix, Plastic Package Case 626A−01

Junction−to−Lead

Junction−to−Air, 2.0 Oz. Printed Circuit Copper Clad

0.36 Sq. Inch

1.0 Sq. Inch

ST Suffix, Plastic Package Case 318E−04

Junction−to−Lead

Junction−to−Air, 2.0 Oz. Printed Circuit Copper Clad

0.36 Sq. Inch

1.0 Sq. Inch

VIR

Imax

RqJL

RqJA

RqJL

RqJA

*0.3 to 10

100

9.0

77

60

14

74

55

V

mA

°C/W

Operating Junction Temperature

TJ

*40 to +150

°C

Storage Temperature

Tstg

*65 to +150

°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

A. This device series contains ESD protection and exceeds the following tests:

Pins 1−3: Human Body Model 2000 V per MIL−STD−883, Method 3015.

Machine Model Method 400 V.

Pin 5: Human Body Model 1000 V per MIL−STD−883, Method 3015.

Machine Model Method 400 V.

Pin 5 is connected to the power switch and start−up circuits, and is rated only to the max voltage of the part, or 700 V.

B. This device contains Latch−up protection and exceeds $100 mA per JEDEC Standard JESD78.

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