NCL30002 데이터 시트보기 (PDF) - ON Semiconductor
부품명
상세내역
일치하는 목록
NCL30002 Datasheet PDF : 17 Pages
| |||
NCL30002
Table 3. ELECTRICAL CHARACTERISTICS (Continued)
VMFP = 2.4 V, VControl = 4 V, Ct = 1 nF, VCS = 0 V, VZCD = 0 V, CDRV = 1 nF, VCC = 12 V, unless otherwise specified
(For typical values, TJ = 25°C. For min/max values, TJ = −40°C to 125°C, unless otherwise specified)
Characteristic
Test Conditions
Symbol
Min
Typ
RAMP CONTROL
Ct Peak Voltage
On Time Capacitor Charge Current
VCOMP = open
VCOMP = open
VCt = 0 V to VCt(MAX)
VCt(MAX)
Icharge
4.535
240
4.93
270
Ct Capacitor Discharge Duration
VCOMP = open
tCt(discharge)
−
50
VCt = VCt(MAX) −100 mV to 500 mV
PWM Propagation Delay
dV/dt = 30 V/ms
VCt = VControl − Ct(offset)
to VDRV = 10%
tPWM
−
130
ZERO CURRENT DETECTION
ZCD Arming Threshold
ZCD Triggering Threshold
ZCD Hysteresis
ZCD Bias Current
Positive Clamp Voltage
Negative Clamp Voltage
ZCD Propagation Delay
VZCD = Increasing
VZCD = Decreasing
VZCD = 5 V
IZCD = 3 mA
IZCD = −2 mA
VZCD = 2 V to 0 V ramp,
dV/dt = 20 V/ms
VZCD = VZCD(TRIG) to VDRV = 90%
VZCD(ARM)
VZCD(TRIG)
VZCD(HYS)
IZCD
VCL(POS)
VCL(NEG)
tZCD
1.25
0.6
500
−2
9.8
−0.9
−
1.4
0.7
700
−
10
−0.7
100
Minimum ZCD Pulse Width
Maximum Off Time in Absence of ZCD
Transition
Falling VDRV = 10% to
Rising VDRV = 90%
tSYNC
−
70
tstart
75
165
DRIVE
Drive Resistance
Rise Time
Fall Time
Drive Low Voltage
Isource = 100 mA
Isink = 100 mA
10% to 90%
90% to 10%
VCC = VCC(on)−200 mV,
Isink = 10 mA
ROH
−
12
ROL
−
6
trise
−
35
tfall
−
25
Vout(start)
−
−
CURRENT SENSE
Current Sense Voltage Threshold
TJ = 25°C
TJ = −40°C to 125°C
VILIM
0.475
0.470
0.485
0.485
Leading Edge Blanking Duration
Overcurrent Detection Propagation
Delay
VCS = 2 V, VDRV = 90% to 10%
dV/dt = 10 V/ms
VCS = VILIM to VDRV = 10%
tLEB
100
195
tCS
40
100
Current Sense Bias Current
VCS = 2 V
ICS
−1
−
Max
5.25
292
150
220
1.55
0.83
900
+2
12
−0.5
170
−
300
20
13
80
70
0.2
0.495
0.500
350
170
1
Unit
V
mA
ns
ns
V
V
mV
mA
V
V
ns
ns
ms
W
ns
ns
V
V
ns
ns
mA
http://onsemi.com
7
Share Link: 