N08L163WC1CT1 데이터 시트보기 (PDF) - NanoAmp Solutions, Inc.

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N08L163WC1CT1

8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit

NanoAmp Solutions, Inc. 

NanoAmp Solutions, Inc.

N08L163WC1C

Advance Information

Data Retention Characteristics

Parameter

Description

Condition

Min Typ Max Unit

VDR

ICCDR

tCDR

tR

Vcc for Data Retention

1.5

Data Retention Current

Vcc = 1.5V, CE ≥ Vcc - 0.2V,

VIN ≥ Vcc - 0.2V or VIN ≤ 0.2V

-L

Chip Deselect to Data

Retention Time

0

Operation Recovery Time

tRC

V

10

µA

4

ns

ns

Data Retention Waveform

Vcc

CE or

LB/UB

Vcc(min)

tCDR

Data Retention Mode

VDR ≥ 1.5V

Vcc(min)

tR

Note: Full device operation requires linear Vcc ramp from VDR to Vcc(min) > 100 µs

Stock No. 23394-B 01/05

7

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

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