BC846B 데이터 시트보기 (PDF) - ZOWIE Technology

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BC846B

General Purpose Transistor

ZOWIE Technology 

Zowie Technology Corporation

General Purpose Transistor

NPN Silicon

BC846A,B

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current-Continuous

3

1

2

SOT-23

COLLECTOR

3

BASE

1

2

EMITTER

Symbol

VCEO

VCBO

VEBO

IC

Value

65

80

6.0

100

Unit

Vdc

Vdc

Vdc

mAdc

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation FR-5 Board(1) TA=25oC

Derate above 25oC

Thermal Resistance Junction to Ambient

Total Device Dissipation Alumina Substrate,(2) TA=25oC

Derate above 25oC

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

Symbol

PD

R JA

PD

R JA

TJ,TSTG

Max.

225

1.8

556

300

2.4

417

-55 to +150

Unit

mW

mW / oC

oC / W

mW

mW / oC

oC / W

oC

DEVICE MARKING

BC846A = 1A,BC846B = 1B

ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)

Characteristic

Symbol Min.

Typ.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdowe Voltage

( IC=10mAdc )

V(BR)CEO

65

-

-

Vdc

Collector-Emitter Breakdowe Voltage

( IC=10 uAdc, VEB=0 )

Collector-Base Breakdowe Voltage

( IC=10 uAdc )

Emitter-Base Breakdowe Voltage

( IE=1.0 uA )

Collector Cutoff Current

( VCB=30 V )

( VCB=30 V, TA = 150oC )

(1) FR-5=1.0 x 0.75 x 0.062in.

(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.

V(BR)CES

80

-

V(BR)CBO

80

-

V(BR)EBO

6.0

-

-

Vdc

-

Vdc

-

Vdc

ICBO

-

-

-

15

nAdc

-

5.0

uAdc

REV. : 0

Zowie Technology Corporation

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