MT4LC16M4G3 데이터 시트보기 (PDF) - Micron Technology

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MT4LC16M4G3

16 MEG x 4 EDO DRAM

Micron Technology 

16 MEG x 4

EDO DRAM

ICC OPERATING CONDITIONS AND MAXIMUM LIMITS

(Notes: 1, 2, 3, 5, 6) (VCC = +3.3V ±0.3V)

PARAMETER/CONDITION

STANDBY CURRENT: TTL

(RAS# = CAS# = VIH)

STANDBY CURRENT: CMOS

(RAS# = CAS# VCC - 0.2V; DQs may be left open;

Other inputs: VIN VCC - 0.2V or VIN ≤ 0.2V)

OPERATING CURRENT: Random READ/WRITE

Average power supply current

(RAS#, CAS#, address cycling: tRC = tRC [MIN])

OPERATING CURRENT: EDO PAGE MODE

Average power supply current

(RAS# = VIL, CAS#, address cycling: tPC = tPC [MIN])

REFRESH CURRENT: RAS#-ONLY

Average power supply current

(RAS# cycling, CAS# = VIH: tRC = tRC [MIN])

REFRESH CURRENT: CBR

Average power supply current

(RAS#, CAS#, address cycling: tRC = tRC [MIN])

REFRESH CURRENT: Extended (“S” version only)

Average power supply current: CAS# = 0.2V or CBR cycling;

RAS# = tRAS (MIN); WE# = VCC - 0.2V; A0-A11, OE# and

DIN = VCC - 0.2V or 0.2V (DIN may be left open)

REFRESH CURRENT: Self (“S” version only)

Average power supply current: CBR with

RAS# tRASS (MIN) and CAS# held LOW;

WE# = VCC - 0.2V; A0-A11, OE# and DIN = VCC - 0.2V or 0.2V

(DIN may be left open)

4K

8K

SYMBOL SPEED REFRESH REFRESH UNITS NOTES

ICC1

ALL

1

1

mA

ICC2

ALL

500

500

µA

ICC3

-5

170

130 mA 25

-6

160

120

ICC4

-5

150

150 mA 25

-6

120

120

ICC5

-5

170

130 mA 22

-6

160

120

ICC6

-5

160

160 mA 4, 7

-6

150

150

ICC7

ALL

400

400

µA 4, 7

ICC8

ALL

400

400

µA 4, 7

16 Meg x 4 EDO DRAM

D22_2.p65 – Rev. 5/00

6

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2000, Micron Technology, Inc.

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