MT3S08T 데이터 시트보기 (PDF) - Toshiba
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MT3S08T Datasheet PDF : 3 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S08T
MT3S08T
VHF~UHF Band Low Noise Amplifier Applications
· Sutable for use in an OSC
· Low noise figure
NF = 1.4dB
|S21e|2 = 10.5dB (@1 V/5 mA/1 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
20
V
8
V
1.5
V
40
mA
10
mA
100
mW
125
°C
-55~125
°C
Marking
3
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight: g (typ.)
TH
1
2
1
2002-01-23
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