MT3S06FS 데이터 시트보기 (PDF) - Toshiba
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MT3S06FS Datasheet PDF : 3 Pages
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Microwave Characteristics (Ta = 25°C)
Characteristic
Transition frequency
Insertion gain
Noise figure
Symbol
Condition
fT
⎪S21e⎪2 (1)
⎪S21e⎪2 (2)
NF (1)
VCE = 3 V, IC = 5 mA
VCE = 1 V, IC = 5 mA, f = 2 GHz
VCE = 3 V, IC = 7 mA, f = 2 GHz
VCE = 1 V, IC = 3 mA, f = 2 GHz
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Condition
Collector cutoff current
Emitter cutoff current
DC current gain
Reverse transfer capacitance
ICBO
IEBO
hFE
Cre
VCB = 5 V, IE = 0
VEB = 1 V, IC = 0
VCE = 1 V, IC = 5 mA
VCB = 1 V, IE = 0, f = 1 MHz(Note)
Note: Cre is measured with a three-terminal method using a capacitance bridge.
MT3S06FS
Min Typ. Max Unit
7
10
⎯ GHz
⎯
8.5
⎯
dB
7
9.5
⎯
⎯
1.7
3
dB
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
1
μA
70
⎯
140
⎯ 0.25 0.5
pF
Caution
This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before
handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the
environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers
and other objects that come into direct contact with devices should be made of antistatic materials.
2
2007-11-01
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