HB52E649E12-B6B 데이터 시트보기 (PDF) - Elpida Memory, Inc

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HB52E649E12-B6B

512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC100 SDRAM

Elpida Memory, Inc 

Absolute Maximum Ratings

Parameter

Voltage on any pin relative to VSS

Supply voltage relative to VSS

Short circuit output current

Power dissipation

Operating temperature

Storage temperature

Note: 1. Respect to VSS

Symbol

VT

VCC

Iout

PT

Topr

Tstg

HB52E649E12-A6B/B6B

Value

Unit

Note

–0.5 to VCC + 0.5

V

1

(≤ 4.6 (max))

–0.5 to +4.6

V

1

50

mA

18.0

W

0 to +55

°C

–50 to +100

°C

DC Operating Conditions (Ta = 0 to +55°C)

Parameter

Symbol

Min

Max

Supply voltage

VCC

3.0

3.6

VSS

0

0

Input high voltage

VIH

2.0

VCC

Input low voltage

VIL

0

0.8

Notes: 1. All voltage referred to VSS

2. The supply voltage with all VCC pins must be on the same level.

3. The supply voltage with all VSS pins must be on the same level.

4. VIH (max) = VCC + 2.0 V for pulse width ≤ 3 ns at VCC.

5. VIL (min) = VSS – 2.0 V for pulse width ≤ 3 ns at VSS.

Unit

V

V

V

V

Notes

1, 2

3

1, 4

1, 5

Data Sheet E0020H20

9

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