HB52E649E12 데이터 시트보기 (PDF) - Elpida Memory, Inc
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HB52E649E12 Datasheet PDF : 16 Pages
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HB52E649E12-A6B/B6B
Capacitance (Ta = 25°C, VCC = 3.3 V ± 0.3 V)
Parameter
Symbol
Max
Unit
Notes
Input capacitance (Address)
CI1
15
pF
1, 2, 4
Input capacitance (RE, CE, W)
CI2
15
pF
1, 2, 4
Input capacitance (CKE)
CI3
23
pF
1, 2, 4
Input capacitance (S)
CI4
15
pF
1, 2, 4
Input capacitance (CK)
CI5
40
pF
1, 2, 4
Input capacitance (DQMB)
CI6
15
pF
1, 2, 4
Input/Output capacitance (DQ)
CI/O1
15
pF
1, 2, 3, 4
Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. Measurement condition: f = 1 MHz, 1.4 V bias, 200 mV swing.
3. DQMB = VIH to disable Data-out.
4. This parameter is sampled and not 100% tested.
AC Characteristics (Ta = 0 to 55°C, VCC = 3.3 V ± 0.3 V, VSS = 0 V)
Parameter
System clock cycle time
(CE latency = 3)
(CE latency = 4)
CK high pulse width
CK low pulse width
Access time from CK
(CE latency = 3)
(CE latency = 4)
Data-out hold time
CK to Data-out low impedance
CK to Data-out high impedance
Data-in setup time
Data in hold time
Address setup time
Address hold time
CKE setup time
CKE setup time for power down exit
CKE hold time
Symbol
t CK
PC100
Symbol
Tclk
HB52E649E12
-A6B/B6B
Min
Max
10
—
t CK
Tclk
10
—
t CKH
Tch
4
—
t CKL
Tcl
4
—
t AC
Tac
—
6.9
t AC
Tac
—
6.9
t OH
Toh
2.1
—
t LZ
1.1
—
t HZ
—
6.9
t DS
Tsi
2.9
—
t DH
Thi
1.9
—
t AS
Tsi
2.6
—
t AH
Thi
1.6
—
t CES
Tsi
2.6
—
t CESP
Tpde
2.6
—
t CEH
Thi
1.6
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1
1
1
1, 2
1, 2
1, 2, 3
1, 4
1
1
1
1, 5
1, 5
1
1
Data Sheet E0020H20
11
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