DCR1260Y65 데이터 시트보기 (PDF) - Dynex Semiconductor

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DCR1260Y65

Phase Control Thyristor

Dynex Semiconductor 

DCR1260Y

THERMAL AND MECHANICAL RATINGS

Symbol

Parameter

Rth(j-c)

Thermal resistance - junction to case

Rth(c-h)

Thermal resistance - case to heatsink

Tvj

Virtual junction temperature

Tstg

Storage temperature range

Fm

Clamping force

Test Conditions

Double side cooled

DC

Single side cooled

Anode DC

Cathode DC

Clamping force 50kN

Double side

(with mounting compound) Single side

On-state (conducting)

Reverse (blocking)

Min. Max. Units

- 0.0095 ˚CW

- 0.019 ˚CW

- 0.019 ˚CW

- 0.002 ˚CW

- 0.004 ˚CW

-

135 ˚C

-

125 ˚C

–55 125 ˚C

45.0 55.0 kN

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

Parameter

V

GT

IGT

VGD

VFGM

V

FGN

VRGM

I

FGM

PGM

PG(AV)

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Peak forward gate voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

Test Conditions

VDRM = 5V, Tcase = 25oC

VDRM = 5V, Tcase = 25oC

At V T = 125oC

DRM case

Anode positive with respect to cathode

Anode negative with respect to cathode

-

Anode positive with respect to cathode

See table fig. 4

-

Max.

3.0

300

0.25

30

0.25

5

10

150

5

Units

V

mA

V

V

V

V

A

W

W

4/10

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