MRF6S18140HSR3(2006) 데이터 시트보기 (PDF) - Freescale Semiconductor
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MRF6S18140HSR3
(Rev.:2006)
(Rev.:2006)
Freescale Semiconductor
MRF6S18140HSR3 Datasheet PDF : 12 Pages
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TYPICAL CHARACTERISTICS
18
17 Gps
16
15
TC = −30_C
25_C
85_C
66
−30_C
25_C
85_C 55
44
33
14
22
13
ηD
12
1
10
VDD = 28 Vdc
IDQ = 1200 mA
f = 1840 MHz
100
11
0
400
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
17
IDQ = 1200 mA
f = 1840 MHz
16
15
14
VDD = 24 V
28 V
32 V
13
0
100
200
260
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
1010
109
108
107
106
90
110 130 150 170 190 210 230 250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 13. MTTF Factor versus Junction Temperature
RF Device Data
Freescale Semiconductor
MRF6S18140HR3 MRF6S18140HSR3
7
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