MMDF2P02HD(2011) 데이터 시트보기 (PDF) - ON Semiconductor
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MMDF2P02HD Datasheet PDF : 8 Pages
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MMDF2P02HD
Power MOSFET
2 Amps, 20 Volts
P−Channel SO−8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a very low reverse recovery time. These
devices are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications
are dc−dc converters, and power management in portable and battery
powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass
storage products such as disk drives and tape drives. The avalanche
energy is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
Features
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for SO−8 Package Provided
• This is a Pb−Free Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1)
Rating
Symbol Value Unit
Drain−to−Source Voltage
VDSS
20
Vdc
Drain−to−Gate Voltage (RGS = 1.0 MW)
VDGR
20
Vdc
Gate−to−Source Voltage − Continuous
VGS
± 20
Vdc
Drain Current − Continuous @ TA = 25°C
ID
Drain Current − Continuous @ TA = 100°C
ID
Drain Current − Single Pulse (tp ≤ 10 ms)
IDM
3.3
Adc
2.1
20
Apk
Total Power Dissipation, TA = 25°C (Note 2)
PD
2.0
W
Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C
Single Pulse Drain−to−Source Avalanche
EAS
Energy − Starting TJ = 25°C (VDD = 20 Vdc,
VGS = 5.0 Vdc, IL = 6.0 Apk,
L = 18 mH, RG = 25 W)
324
mJ
Thermal Resistance, Junction−to−Ambient
(Note 2)
RqJA
62.5 °C/W
Maximum Lead Temperature for Soldering
TL
Purposes, 1/8″ from case for 10 seconds
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Negative sign for P−Channel device omitted for clarity.
2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with
one die operating, 10 sec. max.
http://onsemi.com
2 AMPERES, 20 VOLTS
RDS(on) = 160 mW
P−Channel
D
G
8
1
S
SO−8, DUAL
CASE 751
STYLE 11
MARKING
DIAGRAM
8
D2P02
AYWWG
G
1
D2P02 = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Source−1
Gate−1
Source−2
Gate−2
1 8 Drain−1
2 7 Drain−1
3 6 Drain−2
4 5 Drain−2
ORDERING INFORMATION
Device
Package
Shipping†
MMDF2P02HDR2G SO−8 2500 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
October, 2011 − Rev. 8
Publication Order Number:
MMDF2P02HD/D
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