MMBT918LT1G(2009) 데이터 시트보기 (PDF) - ON Semiconductor
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MMBT918LT1G Datasheet PDF : 3 Pages
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MMBT918LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 3.0 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 3.0 mAdc, VCE = 1.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 0 Vdc, IE = 0, f = 1.0 MHz)
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure
(IC = 1.0 mAdc, VCE = 6.0 Vdc, RS = 50 W, f = 60 MHz) (Figure 1)
Power Output
(IC = 8.0 mAdc, VCB = 15 Vdc, f = 500 MHz)
Common−Emitter Amplifier Power Gain
(IC = 6.0 mAdc, VCB = 12 Vdc, f = 200 MHz)
Symbol
Min
Max
Unit
V(BR)CEO
15
V(BR)CBO
30
V(BR)EBO
3.0
ICBO
−
Vdc
−
Vdc
−
Vdc
−
nAdc
50
hFE
20
VCE(sat)
−
VBE(sat)
−
−
−
Vdc
0.4
Vdc
1.0
fT
MHz
600
−
Cobo
pF
−
3.0
−
1.7
Cibo
pF
−
2.0
NF
dB
−
6.0
Pout
30
mW
−
Gpe
dB
11
−
VBB
EXTERNAL
100 k
VCC
1000 pF BYPASS
0.018 mF
3
0.018 mF
0.018 mF
C
RF
50 W
VM
G
0.018 mF
NF TEST CONDITIONS
IC = 1.0 mA
VCE = 6.0 VOLTS
RS = 50 W
f = 60 MHz
Gpe TEST CONDITIONS
IC = 6.0 mA
VCE = 12 VOLTS
f = 200 MHz
Figure 1. NF, Gpe Measurement Circuit 20−200
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