MMBD4448TW 데이터 시트보기 (PDF) - Willas Electronic Corp.
부품명
상세내역
일치하는 목록
MMBD4448TW Datasheet PDF : 2 Pages
| |||
WILLAS
FM120-M+
MMBD4448TWTHRU
SO1.0TA -S3U6RF3ACPElMaOsUtNicT -SECHnOcTaTKpYsBuAlRaRtIEeR
Diode
RECTIFIERS
-20V-
200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
O u t l i n e D r a w i n g better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
S O T- 3 6 3 SOD-123H
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
.087(2.20)
• Epoxy : UL94-V0 rated flame retardant
.071(1.80) • Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
y Method 2026
r • Polarity : Indicated by cathode band
• Mounting Position : Any
a • Weight : Approximated 0.011 gram
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
in MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
..002310((00..5755)) lim .010(0.25) RATINGS
.003(0.08) Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
.056(1.40) e Maximum DC Blocking Voltage
.047(1.20) r Maximum Average Forward Rectified Current
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
12
13
14
15
16
VRRM
20
30
40
50
60
VRMS
14
21
28
35
42
VDC
20
30
40
50
60
18
10
115 120
80
100
150
200 Vol
56
70
105
140 Vol
80
100
150
200 Vol
IO
1.0
Am
P Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
30
Am
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
RΘJA
40
℃/W
.004(0.10)MAX. Typical Junction Capacitance (Note 1)
Operating Temperature Range
CJ
TJ
-55 to +125
120
-55 to +150
PF
℃
Storage Temperature Range
TSTG
- 65 to +175
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Maximum Forward Voltage at 1.0A DC
VF
.016(0.40) Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=12.50℃0 4 ( 0 . 1 0 )
0.50
0.70
0.85
0.5
10
0.9
0.92 Vol
mAm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
Dimensions in inches and (millimeters)
WILLAS ELECTRROevN.IDC CORP.
WILLAS ELECTRONIC CORP.
Share Link: 