MM8006 데이터 시트보기 (PDF) - Advanced Semiconductor
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MM8006 Datasheet PDF : 1 Pages
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MM8006
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The ASI MM8006 is Designed for
High Frequency Low Noise Amplifier
and Oscillator Applications.
MAXIMUM RATINGS
IC
50 mA
VCBO
15 V
PDISS
600 mW @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +200 °C
PACKAGE STYLE TO-72
1 = EMITTER 2 = BASE 3 = COLLECTOR 4 = CASE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BVCEO
IC = 3.0 mA
BVCBO
ICBO
BVEBO
IC = 1.0 µA
VCB = 15 V
VCB = 15 V
IE = 10 µA
TA = 150 °C
hFE
VCE = 1.0 V IC = 1.0 mA
VCE(SAT)
IC = 10 mA
IB = 1.0 mA
VBE(SAT)
IC = 10 mA
IB = 1.0 mA
ft
VCE = 10 V
IC = 4.0 mA
Cob
VCB = 0 V
VCB = 10 V
Cib
VEB = 0.5 V
f = 100 MHz
f = 140 KHz
f = 140 KHz
f = 140 KHz
NF
VCE = 6.0 V
IC = 1.0 mA
Gpe
VCB = 12 V
IC = 6.0 mA
Pout
η
VCB = 15 V
IC = 8.0 mA
f = 60 MHz
f = 200 MHz
f = 500 MHz
NONE
MINIMUM TYPICAL MAXIMUM
10
15
0.01
1.0
3.0
25
0.4
1.0
UNITS
V
V
µA
V
---
V
V
1000
MHz
3.0
pF
1.7
2.0
pF
6.0
dB
15
dB
30
mW
25
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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