CM600HU-12F(1999) 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC

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CM600HU-12F
(Rev.:1999)

MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE

MITSUBISHI ELECTRIC  

MAXIMUM RATINGS (Tj = 25°C)

Symbol

VCES

VGES

IC

ICM

IE (Note 1)

IEM (Note 1)

PC (Note 3)

Tj

Tstg

Viso

—

—

Parameter

Collector-emitter voltage

Gate-emitter voltage

Collector current

Emitter current

Maximum collector dissipation

Junction temperature

Storage temperature

Isolation voltage

Torque strength

Weight

G-E Short

C-E Short

TC = 25°C

Pulse

TC = 25°C

Pulse

TC = 25°C

Conditions

Main terminal to base plate, AC 1 min.

Main Terminal M8

Mounting holes M6

G(E) Terminal M4

Typical value

MITSUBISHI IGBT MODULES

CM600HU-24F

HIGH POWER SWITCHING USE

(Note 2)

(Note 2)

Ratings

1200

±20

600

1200

600

1200

1900

–40 ~ +150

–40 ~ +125

2500

8.8 ~ 10.8

3.5 ~ 4.5

1.3 ~ 1.7

600

Unit

V

V

A

A

W

°C

°C

V

N•m

N•m

N•m

g

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol

Parameter

Test conditions

Min.

ICES

Collector cutoff current

VCE = VCES, VGE = 0V

—

VGE(th) Gate-emitter threshold voltage IC = 60mA, VCE = 10V

5

IGES

Gate leakage current

VGE = VCES, VCE = 0V

—

Tj = 25°C

—

VCE(sat) Collector-emitter saturation voltage Tj = 125°C

IC = 600A, VGE = 15V

—

Cies

Input capacitance

—

Coes

Output capacitance

VCE = 10V

—

Cres

Reverse transfer capacitance VGE = 0V

—

QG

Total gate charge

VCC = 600V, IC = 600A, VGE = 15V

—

td(on)

Turn-on delay time

—

tr

Turn-on rise time

VCC = 600V, IC = 600A

—

td(off)

Turn-off delay time

VGE1 = VGE2 = 15V

—

tf

Turn-off fall time

RG = 1.0Ω, Inductive load switching operation

—

trr (Note 1) Reverse recovery time

IE = 600A

—

Qrr (Note 1) Reverse recovery charge

—

VEC(Note 1) Emitter-collector voltage

IE = 600A, VGE = 0V

—

Rth(j-c)Q

Rth(j-c)R

Thermal resistance*1

IGBT part

FWDi part

—

—

Rth(c-f)

Contact thermal resistance

Case to fin, Thermal compoundapplied*2

—

Rth(j-c’)Q Thermal resistance

Tc measured point is just under the chips

—

RG

External gate resistance

1.0

Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).

2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.

3. Junction temperature (Tj) should not increase beyond 150°C.

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

*1 : Tc measured point is indicated in OUTLINE DRAWING.

*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.

*3 : If you use this value, Rth(f-a) should be measured just under the chips.

Limits

Typ.

Max. Unit

—

2

mA

6

—

1.8

1.9

—

—

—

6600

—

—

—

—

—

43.2

—

—

—

0.015

—

—

7

V

80

2.4

—

230

10

6.0

—

300

150

800

300

500

—

3.2

0.063

0.075

—

0.032V3

10

µA

V

nF

nC

ns

ns

µC

V

°C/W

Ω

Aug. 1999

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